SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Structural and electrical properties of Tix Al1-x Oy thin films grown by atomic layer deposition

(7) Alekhin, A P a Chouprik, A A a Gudkova, S A a Markeev, A M a Lebedinskii, Yu Yu b Matveyev, Yu A b Zenkevich, A V b

a MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY (Russian Federation)

b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; OXIDE FILMS; RAPID THERMAL PROCESSING; SILICA; SILICON; SODIUM ALUMINATE; TITANIUM OXIDES;

AMORPHOUS STRUCTURES; AS-GROWN; COMPOSITIONAL RANGE; STRUCTURAL AND ELECTRICAL PROPERTIES; TERNARY OXIDES; TERNARY PHASIS; THREE ORDERS OF MAGNITUDE; TI/AL RATIOS;

THIN FILMS;

EID: 84905933744 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3533763 Document Type: Conference Paper

Times cited : (23)

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