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Nanoscale

Volumn 6, Issue 21, 2014, Pages 12383-12390

Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility

(3) Yang, Rui a Wang, Zenghui a Feng, Philip X L a

a Case Western Reserve University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF LIQUIDS; HALL MOBILITY; HOLE MOBILITY; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MULTILAYERS; SULFUR COMPOUNDS;

CIRCUIT APPLICATION; ELECTRICAL BREAKDOWN; EXPERIMENTAL INVESTIGATIONS; FIELD EFFECT TRANSISTOR (FETS); MOLYBDENUM DISULFIDE; ON/OFF CURRENT RATIO; POWER HANDLING CAPACITY; SINGLE LAYER DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 84907964946 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr03472d Document Type: Article

Times cited : (76)

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