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Volumn 88, Issue 24, 2013, Pages

Defect-induced conductivity anisotropy in MoS 2 monolayers

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EID: 84892380492     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.245440     Document Type: Article
Times cited : (160)

References (54)
  • 2
    • 33847690144 scopus 로고    scopus 로고
    • The rise of graphene
    • DOI 10.1038/nmat1849, PII NMAT1849
    • A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007). 1476-1122 10.1038/nmat1849 (Pubitemid 46353764)
    • (2007) Nature Materials , vol.6 , Issue.3 , pp. 183-191
    • Geim, A.K.1    Novoselov, K.S.2
  • 5
    • 79961237848 scopus 로고    scopus 로고
    • 5, 245213. 1098-0121 PRBMDO 10.1103/PhysRevB.83.245213
    • A. Kuc, N. Zibouche, and T. Heine, Phys. Rev. B 83, 245213 (2011). 1098-0121 PRBMDO 10.1103/PhysRevB.83.245213
    • (2011) Phys. Rev. B , vol.83
    • Kuc, A.1    Zibouche, N.2    Heine, T.3
  • 14
    • 84876170404 scopus 로고    scopus 로고
    • 14, 165402. 1098-0121 PRBMDO 10.1103/PhysRevB.87.165402
    • K. Dolui, I. Rungger, and S. Sanvito, Phys. Rev. B 87, 165402 (2013). 1098-0121 PRBMDO 10.1103/PhysRevB.87.165402
    • (2013) Phys. Rev. B , vol.87
    • Dolui, K.1    Rungger, I.2    Sanvito, S.3
  • 16
    • 84856256344 scopus 로고    scopus 로고
    • 16, 1. 1434-6028 EPJBFY 10.1140/epjb/e2011-20818-1
    • N. Zibouche, A. Kuc, and T. Heine, Eur. Phys. J. B 85, 1 (2012). 1434-6028 EPJBFY 10.1140/epjb/e2011-20818-1
    • (2012) Eur. Phys. J. B , vol.85
    • Zibouche, N.1    Kuc, A.2    Heine, T.3
  • 31
    • 84872110140 scopus 로고    scopus 로고
    • 31, 253. 1530-6984 NALEFD 10.1021/nl3040042
    • X. Zou, Y. Liu, and B. I. Yakobson, Nano Lett. 13, 253 (2013). 1530-6984 NALEFD 10.1021/nl3040042
    • (2013) Nano Lett. , vol.13
    • Zou, X.1    Liu, Y.2    Yakobson, B.I.3
  • 33
    • 0007638285 scopus 로고    scopus 로고
    • 33, 185. 0020-7608 IJQCB2 10.1002/(SICI)1097-461X(1996)58:2<185::AID- QUA7>3.0.CO;2-U
    • G. Seifert, D. Porezag, and T. Frauenheim, Int. J. Quantum Chem. 58, 185 (1996). 0020-7608 IJQCB2 10.1002/(SICI)1097-461X(1996)58:2<185::AID- QUA7>3.0.CO;2-U
    • (1996) Int. J. Quantum Chem. , vol.58
    • Seifert, G.1    Porezag, D.2    Frauenheim, T.3
  • 39
    • 84885871106 scopus 로고    scopus 로고
    • 39, 5473. 0935-9648 ADVMEW 10.1002/adma.201301492
    • P. Miró, M. Ghorbani-Asl, and T. Heine, Adv. Mater. 25, 5473 (2013). 0935-9648 ADVMEW 10.1002/adma.201301492
    • (2013) Adv. Mater. , vol.25
    • Miró, P.1    Ghorbani-Asl, M.2    Heine, T.3
  • 41
    • 84996237073 scopus 로고
    • 41, 863. 0031-8086 PHMAA4 10.1080/14786437008238472
    • R. Landauer, Philos. Mag. 21, 863 (1970). 0031-8086 PHMAA4 10.1080/14786437008238472
    • (1970) Philos. Mag. , vol.21
    • Landauer, R.1
  • 42
    • 4243971222 scopus 로고
    • 42, 6851. 0163-1829 PRBMDO 10.1103/PhysRevB.23.6851
    • D. S. Fisher and P. A. Lee, Phys. Rev. B 23, 6851 (1981). 0163-1829 PRBMDO 10.1103/PhysRevB.23.6851
    • (1981) Phys. Rev. B , vol.23
    • Fisher, D.S.1    Lee, P.A.2
  • 44
    • 69549084323 scopus 로고    scopus 로고
    • 44, 033407. 1098-0121 PRBMDO 10.1103/PhysRevB.80.033407
    • J. Ma, D. Alfè, A. Michaelides, and E. Wang, Phys. Rev. B 80, 033407 (2009). 1098-0121 PRBMDO 10.1103/PhysRevB.80.033407
    • (2009) Phys. Rev. B , vol.80
    • Ma, J.1    Alfè, D.2    Michaelides, A.3    Wang, E.4
  • 45
    • 33846292215 scopus 로고    scopus 로고
    • 45, 81. 1063-7826 SMICES 10.1134/S1063782607010162
    • A. N. Enyashin and A. L. Ivanovskii, Semiconductors 41, 81 (2007). 1063-7826 SMICES 10.1134/S1063782607010162
    • (2007) Semiconductors , vol.41
    • Enyashin, A.N.1    Ivanovskii, A.L.2
  • 46
  • 48
    • 84918249181 scopus 로고
    • 48, 193. 0001-8732 ADPHAH 10.1080/00018736900101307
    • J. A. Wilson and A. D. Yoffe, Adv. Phys. 18, 193 (1969). 0001-8732 ADPHAH 10.1080/00018736900101307
    • (1969) Adv. Phys. , vol.18
    • Wilson, J.A.1    Yoffe, A.D.2
  • 49
    • 84892382961 scopus 로고    scopus 로고
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevB.88.245440 for the projected densities of states of MoS 2 -MLs with larger point and grain boundary defects (structures IV-IX), and their detailed electron conductance close to the Fermi level.
  • 50
    • 34447550598 scopus 로고    scopus 로고
    • Scattering and interference in epitaxial graphene
    • DOI 10.1126/science.1142882
    • G. M. Rutter, J. N. Crain, N. P. Guisinger, T. Li, P. N. First, and J. A. Stroscio, Science 317, 219 (2007). 0036-8075 SCIEAS 10.1126/science.1142882 (Pubitemid 47076191)
    • (2007) Science , vol.317 , Issue.5835 , pp. 219-222
    • Rutter, G.M.1    Crain, J.N.2    Guisinger, N.P.3    Li, T.4    First, P.N.5    Stroscio, J.A.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.