Mechanically modulated tunneling resistance in monolayer MoS2

Applied Physics Letters

Volumn 103, Issue 18, 2013, Pages

  Fu, Deyi ^a   Zhou, Jian ^a   Tongay, Sefaattin ^a   Liu, Kai ^a,b   Fan, Wen ^a   King Liu, Tsu Jae ^c   Wu, Junqiao ^a,b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BOTTOM ELECTRODES; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPES; METAL-INSULATOR-METAL TUNNELING; ORDERS OF MAGNITUDE; QUANTUM TUNNELING; TUNNELING RESISTANCE;

ATOMIC FORCE MICROSCOPY; METAL INSULATOR BOUNDARIES; MOLYBDENUM COMPOUNDS;

MONOLAYERS;

EID: 84889661590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4827301     Document Type: Article

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