MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays

ACS Nano

Volumn 7, Issue 7, 2013, Pages 5870-5881

  Nam, Hongsuk ^a   Wi, Sungjin ^a   Rokni, Hossein ^a   Chen, Mikai ^a   Priessnitz, Greg ^a   Lu, Wei ^a   Liang, Xiaogan ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

graphene; molybdenum disulfide; nanoelectronics; nanomanufacturing; nanoprint; transistor

Indexed keywords

FIELD-EFFECT MOBILITIES; MICRO AND NANOSTRUCTURES; MOLYBDENUM DISULFIDE; NANO-MANUFACTURING; NANO-MANUFACTURING TECHNOLOGY; NANOELECTRONIC APPLICATIONS; NANOPRINT; TRANSISTOR PARAMETERS;

GATE DIELECTRICS; GRAPHENE; LITHOGRAPHY; NANOELECTRONICS; NANORIBBONS; NANOSTRUCTURES; PLASMA APPLICATIONS; PRINTING; TRANSISTORS;

MOLYBDENUM COMPOUNDS;

METAL NANOPARTICLE; MOLYBDENUM; SULFIDE; PLASMA GAS;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE; MATERIALS TESTING; METHODOLOGY; MOLECULAR IMPRINTING; PARTICLE SIZE; PLASMA GAS; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE; DEVICE FAILURE ANALYSIS; PROCEDURES;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; METAL NANOPARTICLES; MOLECULAR IMPRINTING; MOLYBDENUM; PARTICLE SIZE; PLASMA GASES; SULFIDES; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 84880850546     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401093u     Document Type: Article

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