The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics

Applied Surface Science

Volumn 313, Issue , 2014, Pages 585-590

  Choi, Dong Won ^a   Maeng, W J ^b   Park, Jin Seong ^a  

^a Hanyang University   (South Korea)

^b University of Wisconsin Madison   (United States)

Author keywords

Atomic layer deposition; Hydrogen peroxide; Tin oxide; Transparent conducting oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL BONDS; CONDUCTIVE FILMS; ELECTRONIC STRUCTURE; FILM GROWTH; FLEXIBLE ELECTRONICS; GROWTH TEMPERATURE; HYDROGEN PEROXIDE; OPTICAL PROPERTIES; OXIDATION; PEROXIDES; THIN FILM CIRCUITS; TIN OXIDES; TRANSPARENT CONDUCTING OXIDES;

CHEMICAL BONDING STATE; CONDUCTING TIN OXIDES; ELECTRONIC BAND STRUCTURE; FILM COMPOSITION; FILM CRYSTALLINITY; HIGH CARRIER MOBILITY; OPTIMIZED PROCESS; TEMPERATURE RANGE;

THIN FILMS;

EID: 84904818761     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.06.027     Document Type: Article

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