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Journal of the Electrochemical Society

Volumn 158, Issue 8, 2011, Pages

Low pressure chemical vapor deposition of aluminum-doped zinc oxide for transparent conducting electrodes

(4) Kim, Woo Hee a,b Maeng, W J c Kim, Min Kyu a Kim, Hyungjun a

a Yonsei University (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-DOPING; ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; CARRIER ELECTRONS; COMPARATIVE STUDIES; COMPREHENSIVE STUDIES; EFFECTIVE OXIDE CHARGE; GATE ELECTRODES; HIGH WORK FUNCTION; INTERFACE STATE; METAL OXIDE SEMICONDUCTOR; TRANSPARENT CONDUCTING ELECTRODES; VISIBLE RANGE;

ALUMINUM; ALUMINUM COATINGS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; ELECTRODES; ELECTROLYTIC CAPACITORS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; OXIDE FILMS; SEMICONDUCTOR DOPING; WORK FUNCTION; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 80051740548 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3599055 Document Type: Article

Times cited : (47)

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