Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

Materials Research Bulletin

Volumn 47, Issue 10, 2012, Pages 3052-3055

  Lee, Byung Kook ^a,b   Jung, Eunae ^a   Kim, Seok Hwan ^a   Moon, Dae Chul ^a   Lee, Sun Sook ^a   Park, Bo Keun ^a   Hwang, Jin Ha ^b   Chung, Taek Mo ^a   Kim, Chang Gyoun ^a   An, Ki Seok ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CHANNEL LAYERS; DEPOSITION TEMPERATURES; DEVICE MOBILITIES; LOW DEPOSITION TEMPERATURE; N-TYPE CONDUCTIVITY; NANO-CRYSTALLINE STRUCTURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; THIN-FILM TRANSISTOR (TFTS);

OXIDE FILMS; THIN FILM TRANSISTORS; THIN FILMS; TIN; TIN OXIDES; VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 84866322177     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.04.120     Document Type: Conference Paper

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