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Journal of the Korean Physical Society

Volumn 60, Issue 3, 2012, Pages 307-310

Enhancement of the hall mobility in hydrogen-ion-irradiated ZnO films

(4) Yeo, C S a Chung, K B a Park, J S a Song, J H b

a Dankook University (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

Electronic structure; Hall mobility; Hydrogen; Ion irradiation; ZnO film

Indexed keywords

EID: 84862845689 PISSN: 03744884 EISSN: 19768524 Source Type: Journal
DOI: 10.3938/jkps.60.307 Document Type: Letter

Times cited : (8)

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