SCOPUS 정보 검색 플랫폼

Advanced Functional Materials

Volumn 24, Issue 26, 2014, Pages 4113-4118

Size dependence of resistive switching at nanoscale metal-oxide interfaces

(4) Hou, Jiechang a Nonnenmann, Stephen S b Qin, Wei c Bonnell, Dawn A a

a UNIVERSITY OF PENNSYLVANIA (United States)

b University of Massachusetts (United States)

c University of California Davis (United States)

Author keywords

electronic transport; interfaces; nanoparticles; resistive switching; Schottky barrier

Indexed keywords

INTERFACES (MATERIALS); NANOPARTICLES; SCHOTTKY BARRIER DIODES;

BUILT-IN ELECTRIC FIELDS; ELECTRONIC TRANSPORT; GEOMETRIC SCALING; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; METAL OXIDE INTERFACE; RESISTIVE SWITCHING; SCHOTTKY BARRIERS;

SWITCHING SYSTEMS;

EID: 84904201961 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201304121 Document Type: Article

Times cited : (33)

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