Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Tedesco, J L ^a   Rowe, J E ^a   Nemanich, R J ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT LOWERING; BARRIER HEIGHTS; CLEAN SURFACES; COBALT SILICIDES; CONDUCTING ATOMIC FORCE MICROSCOPIES; CURRENT-VOLTAGE CURVES; CURRENT-VOLTAGE MEASUREMENTS; EX-SITU; EXPERIMENTAL ERRORS; FERMI-LEVEL PINNING; I - V CURVES; IDEALITY FACTORS; NANO-SCALE; NATIVE OXIDES; NON IDEALITIES; PASSIVATED SURFACES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SI (1 1 1); SI (100) SUBSTRATES; SI(1 0 0 ); SI(100) SURFACE; SILICON SUBSTRATES; SILICON SURFACES; SPREADING RESISTANCES; SURFACE STATE; TEMPERATURE VARIATIONS; THERMIONIC EMISSION THEORIES; ULTRA-HIGH VACUUMS;

ATOMIC FORCE MICROSCOPY; ATOMS; COBALT; CONDUCTIVE FILMS; ELECTRIC CURRENTS; FERMI LEVEL; FERMIONS; MOSFET DEVICES; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; THERMIONIC EMISSION; ULTRAHIGH VACUUM; VACUUM DEPOSITION; VOLTAGE MEASUREMENT;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65449120637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3100212     Document Type: Article

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