Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Solid-State Electronics

Volumn 99, Issue , 2014, Pages 59-64

  Wang, Qingpeng ^a,b   Jiang, Ying ^a,b   Miyashita, Takahiro ^c   Motoyama, Shin Ichi ^c   Li, Liuan ^b   Wang, Dejun ^a   Ohno, Yasuo ^b,d   Ao, Jin Ping ^b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c 33 Tanakamiya cho Takeda F   (Japan)

^d E Device Inc   (Japan)

Author keywords

AlGaN GaN heterostructure; Dry etching; GaN MOSFET; Nitrogen vacancy; Threshold voltage

Indexed keywords

DRY ETCHING; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MOSFET DEVICES; NITROGEN; OHMIC CONTACTS; SILICON; THRESHOLD VOLTAGE; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN/GAN HETEROSTRUCTURES; FABRICATION PROCESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; NITROGEN VACANCIES; SILICON CONTAMINATION; TETRAETHYL ORTHOSILICATES; THRESHOLD CONDITION;

GALLIUM NITRIDE;

EID: 84904020744     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2014.05.004     Document Type: Article

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