GaN MOSFET with boron trichloride-based dry recess process

Journal of Physics: Conference Series

Volumn 441, Issue 1, 2013, Pages

  Jiang, Y ^a,b   Wang, Q P ^a,b   Tamai, K ^a   Miyashita, T ^c   Motoyama, S ^c   Wang, D J ^b   Ao, J P ^a   Ohno, Y ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACE STATES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; POWER MOSFET; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HETEROSTRUCTURES; BORON TRICHLORIDE; ETCHING GAS; FIELD-EFFECT MOBILITIES; INTERFACE STATE DENSITY; MOS-FET; RECESSED GATE; SILICON TETRACHLORIDE;

MOSFET DEVICES;

EID: 84881078067     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/441/1/012025     Document Type: Conference Paper

References (8)

1. Mistele D, Rotter T, Röver K S, Paprotta S, Seyboth M, Schwegler V, Fedler F, Klausing H, Semchinova O K, Stemmer J, Aderhold J and Graul J 2002 Mater. Sci. Eng. B 93 107
2. Huang W, Khan T, Chow T P 2006 IEEE Electron Device Lett. 27 796
3. Tsai C Y, Wu T L, Chin A 2012 IEEE Electron Device Lett. 33 35
4. Ao J P, Nakatani K, Ohmuro K, Sugimo M, Hu C Y, Sogawa Y, Ohno Y 2010 Japan. J. Appl. Phys. 49 04DF09
5. Ao J P, Nakatani K, Y, Sogawa Y, Akamatsu S, Kim Y H, Miyashita T, Motoyama S I, Ohno Y 2011 Phys. Status Solidi C 8 457
6. Matsuura K, Kikuta D, Ao J P, Ogiya H, Hiramoto M, Kawai H, Ohno Y 2007 Japan. J. Appl. Phys. 46 2320
7. Wang Q P, Tamai K, Miyashita T, Motoyama S, Wang D J, Ao J P, Ohno Y 2013 Japan. J. Appl. Phys. 52 01AG02
8. Gaind A K, Kasprzak L A 1979 Solid-State Electron 22 303