Investigation of pyroelectric polarization effect on GaN MOS capacitors and field-effect transistors

2012 Lester Eastman Conference on High Performance Devices, LEC 2012

Volumn , Issue , 2012, Pages

  Zhang, J ^a   Hitchcock, C ^a   Li, Z ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

GaN; MOS capacitor; MOSC HEMT; polarization

Indexed keywords

ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; FLAT-BAND VOLTAGE SHIFT; GAN; GAN SUBSTRATE; HIGH TEMPERATURE; INTERFACE TRAPS; LOW TEMPERATURES; MOSC-HEMT; POLARIZATION CHARGES; PYROELECTRIC POLARIZATION; SAPPHIRE SUBSTRATES; SI SUBSTRATES; THRESHOLD VOLTAGE SHIFTS; VOLTAGE COEFFICIENT;

DIELECTRIC DEVICES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POLARIZATION; SAPPHIRE; SEMICONDUCTING SILICON; SILICON; SUBSTRATES; SURFACE SCATTERING;

MOS CAPACITORS;

EID: 84874050217     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/lec.2012.6410982     Document Type: Conference Paper

References (6)

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