Enhancement-mode n-channel GaN MOSFETs on p and n- GaN/sapphire substrates

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Huang, W ^a   Khan, T ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; SAPPHIRE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

FIELD-EFFECT MOBILITY; GATE GEOMETRIES; SAPPHIRE SUBSTRATES;

MOSFET DEVICES;

EID: 34247494759     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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12. Y. Tang, Ph. D thesis, Rensselaer Polytechnic Institute, August, 2003
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