GaN metal-oxide-semiconductor field-effect transistor with tetraethylorthosilicate SiO2 gate insulator on AlGaN/GaN heterostructure

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Ao, Jin Ping ^a   Nakatani, Katsutoshi ^a   Ohmuro, Keisuke ^a   Sugimoto, Masahiro ^b   Hu, Cheng Yu ^a   Sogawa, Yuji ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HFETS; CURRENT MEASUREMENTS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE VOLTAGES; GATE-LEAKAGE CURRENT; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; SOURCE AND DRAINS; TETRA-ETHYL-ORTHO-SILICATE; TETRAETHYL ORTHOSILICATES;

CAPACITANCE MEASUREMENT; DIELECTRIC DEVICES; ELECTRIC CURRENT MEASUREMENT; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77952737365     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DF09     Document Type: Article

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