SCOPUS 정보 검색 플랫폼

Volumn 52, Issue 1 PART2, 2013, Pages

Influence of dry recess process on enhancement-mode GaN metal-oxide-semiconductor field-effect transistors

(7) Wang, Qingpeng a,b Tamai, Kentaro a Miyashita, Takahiro c Motoyama, Shin Ichi c Wang, Dejun b Ao, Jin Ping a Ohno, Yasuo a

a UNIVERSITY OF TOKUSHIMA (Japan)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

c 33 Tanakamiya cho Takeda F (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BIAS POWER; ENHANCEMENT-MODE; ETCHING DEPTH; ETCHING MASKS; FIELD-EFFECT MOBILITIES; GATE RECESS; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; MOSFET DEVICES; PHOTORESISTS;

DRY ETCHING;

EID: 84872870975 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.01AG02 Document Type: Article

Times cited : (30)

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