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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 457-460

GaN MOSFET with a gate SiO2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition

(8) Ao, Jin Ping a Nakatani, Katsutoshi a Sogawa, Yuji a Akamatsu, Shiro a Kim, Young Hyun a Miyashita, Takahiro b Motoyama, Shin ichi b Ohno, Yasuo a

a UNIVERSITY OF TOKUSHIMA (Japan)

b 33 Tanakamiya cho Takeda F (Japan)

Author keywords

AlGaN GaN HFET; Enhancement mode; Gallium nitride; MOSFET; Normally off; PECVD

Indexed keywords

ALGAN/GAN HFETS; ENHANCEMENT-MODE; MOS-FET; NORMALLY-OFF; PECVD;

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOSFET DEVICES; OXYGEN; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 79951698052 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000489 Document Type: Article

Times cited : (10)

References (12)

1
- 0042387929
- J.-P. Ao, D. Kikuta, N. Kubota, Y. Naoi, and Y. Ohno, IEEE Electron Device Lett. 24, 500 (2003).
- (2003) IEEE Electron Device Lett , vol.24 , pp. 500
- Ao, J.-P.¹ Kikuta, D.² Kubota, N.³ Naoi, Y.⁴ Ohno, Y.⁵

2
- 79951692776
- Y. Cai, Z. Cheng, W. Tang, K. Chen, and K. Lau, IEDM 771 (2005).
- (2005) IEDM 771
- Cai, Y.¹ Cheng, Z.² Tang, W.³ Chen, K.⁴ Lau, K.⁵

3
- 33947182926
- Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen. IEEE Trans. Electron Devices 53, 2207 (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 2207
- Cai, Y.¹ Zhou, Y.² Lau, K.M.³ Chen, K.J.⁴

4
- 31744436913
- W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006).
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 356
- Saito, W.¹ Takada, Y.² Kuraguchi, M.³ Tsuda, K.⁴ Omura, I.⁵

5
- 54249124992
- M. Shimizu, G. Piao, M. Inada, S. Yagi, Y. Yano, and N. Akutsu, Jpn. J. Appl. Phys. 47, 2817 (2008).
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 2817
- Shimizu, M.¹ Piao, G.² Inada, M.³ Yagi, S.⁴ Yano, Y.⁵ Akutsu, N.⁶

6
- 2342590717
- Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, and J. I. Chyi, Appl. Phys. Lett. 84, 2919 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2919
- Irokawa, Y.¹ Nakano, Y.² Ishiko, M.³ Kachi, T.⁴ Kim, J.⁵ Ren, F.⁶ Gila, B.P.⁷ Onstine, A.H.⁸ Abernathy, C.R.⁹ Pearton, S.J.¹⁰ Pan, C.C.¹¹ Chen, G.T.¹² Chyi, J.I.¹³

7
- 36549019022
- H. Kambayashi, Y. Niiyama, S. Ootomo, T. Nomura, M. Iwami, Y. Satoh, S. Kato, and S. Yoshida, IEEE Electron Device Lett. 28, 1077 (2007).
- (2007) IEEE Electron Device Lett , vol.28 , pp. 1077
- Kambayashi, H.¹ Niiyama, Y.² Ootomo, S.³ Nomura, T.⁴ Iwami, M.⁵ Satoh, Y.⁶ Kato, S.⁷ Yoshida, S.⁸

8
- 34547232670
- W. Huang, T. P. Chow, and T. Khan, Phys. Status Solidi A 204, 2064 (2007).
- (2007) Phys. Status Solidi A , vol.204 , pp. 2064
- Huang, W.¹ Chow, T.P.² Khan, T.³

9
- 77953524807
- S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, and T. Tanaka, IEICE Trans. Electron. E-91C, 1001 (2008).
- (2008) IEICE Trans. Electron. , vol.E-91C , pp. 1001
- Sugiura, S.¹ Kishimoto, S.² Mizutani, T.³ Kuroda, M.⁴ Ueda, T.⁵ Tanaka, T.⁶

10
- 47249146111
- T. Oka and T. Nozawa, IEEE Electron Device Lett. 29, 668 (2008).
- (2008) IEEE Electron Device Lett , vol.29 , pp. 668
- Oka, T.¹ Nozawa, T.²

11
- 79951709366
- Takamatsu, Japan
- B. Lu, E. L. Piner, and T. Palacios, in: Proceedings 37th International Symposium on Compound Semiconductor, Takamatsu, Japan, 2010, p. 279.
- (2010) Proceedings 37th International Symposium on Compound Semiconductor , pp. 279
- Lu, B.¹ Piner, E.L.² Palacios, T.³

12
- 77952737365
- J. -P. Ao, K. Nakatani, K. Ohmuro, M. Sugimoto, C.-Y. Hu, Y. Sogawa, and Y. Ohno, Jpn. J. Appl. Phys. 49, 04DF09 (2010).
- (2010) Jpn. J. Appl. Phys , vol.49
- Ao, J.-P.¹ Nakatani, K.² Ohmuro, K.³ Sugimoto, M.⁴ Hu, C.-Y.⁵ Sogawa, Y.⁶ Ohno, Y.⁷

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