Observation of side-gating effect in AlGaN/GaN heterostructure field effect transistors

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Ohno, Yasuo ^a   Kio, Yusuke ^a   Ikawa, Yusuke ^a   Ao, Jin Ping ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HOLE CAPTURE CROSS SECTIONS; HOLE EMISSION; LED ILLUMINATION; NEGATIVE BIAS; SIDE-GATING EFFECT; TEMPERATURE VARIATION; TRAP ENERGY LEVELS;

FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES;

GALLIUM NITRIDE;

EID: 84883173624     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JN28     Document Type: Article

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