High-mobility solution-processed amorphous indium zinc oxide/In 2O3 nanocrystal hybrid thin-film transistor

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 72-74

  Wang, Chun Lan ^a   Liu, Xing Qiang ^a   Xiao, Xiang Heng ^a   Liu, Yue Li ^b   Chen, Wen ^b   Li, Jin Chai ^a   Shen, Guo Zhen ^c   Liao, Lei ^a  

^a WUHAN UNIVERSITY   (China)

^b Wuhan University of Technology   (China)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Indium zinc oxide (IZO); low temperature; solution processing; thin film transistors (TFTs)

Indexed keywords

FABRICATION TECHNIQUE; FIELD-EFFECT MOBILITIES; HIGH MOBILITY; INDIUM OXIDE; INDIUM ZINC OXIDES; INDIUM-ZINC-OXIDE FILMS; LOW TEMPERATURES; ON-OFF RATIO; OXIDE SEMICONDUCTOR; SOLUTION-PROCESSED; SOLUTION-PROCESSING; THIN-FILM TRANSISTOR (TFTS);

ELECTRIC PROPERTIES; INDIUM; NANOCRYSTALS; OXIDE FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; TEMPERATURE; THIN FILM TRANSISTORS;

AMORPHOUS FILMS;

EID: 84871807397     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2226425     Document Type: Article

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