Mechanism analysis of off-leakage current in an LDD poly-si TFT using activation energy

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 764-766

  Nakashima, Akihiro ^a   Kimura, Mutsumi ^a,b  

^a RYUKOKU UNIVERSITY   (Japan)

^b High Tech Research Center   (Japan)

Author keywords

Activation energy; lightly doped drain (LDD); mechanism analysis; off leakage current; poly Si; thin film transistor (TFT)

Indexed keywords

LIGHTLY DOPED DRAIN (LDD); MECHANISM ANALYSIS; OFF-LEAKAGE CURRENT; POLY-SI; THIN-FILM TRANSISTOR (TFT);

ACTIVATION ANALYSIS; DRAIN CURRENT; ELECTRIC FIELDS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; THIN FILM TRANSISTORS;

ACTIVATION ENERGY;

EID: 79957599579     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2132112     Document Type: Article

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