Empirical model for leakage current in poly-silicon thin film transistor

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 2015-2019

  Siddiqui, M J ^a,b   Qureshi, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b ALIGARH MUSLIM UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOLE TRAPS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS;

POLYSILICON; POOLE-FRENKEL EFFECTS;

THIN FILM TRANSISTORS;

EID: 0034324274     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00160-X     Document Type: Article

References (9)

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