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Volumn 59, Issue 1, 2012, Pages 180-187

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

Author keywords

Low frequency noise; nanodevices; Schottky barriers (SBs); silicon on insulator (SOI)

Indexed keywords

1/F NOISE; BARRIER HEIGHTS; CHARGE TRANSPORT MECHANISMS; DOPANT SEGREGATION; LARGE AMPLITUDE; LOW-FREQUENCY NOISE; MODULATION TECHNIQUES; NANO SCALE; NANO-DEVICES; NANOSCALE FIELD-EFFECT TRANSISTORS; SCHOTTKY BARRIERS; SCHOTTKY BARRIERS (SBS); SILICON ON INSULATOR; SILICON-ON-INSULATORS;

EID: 84855427778     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2169676     Document Type: Article
Times cited : (20)

References (35)
  • 2
    • 0036642907 scopus 로고    scopus 로고
    • Low Schottky barrier source/drain for advanced MOS architecture: Device design and material considerations
    • DOI 10.1016/S0038-1101(02)00033-3, PII S0038110102000333
    • E. Dubois and G. Larrieu, "Low Schottky barrier source/drain for advanced MOS architecture: Device design and material consideration," Solid State Electron., vol. 46, no. 7, pp. 997-1004, Jul. 2002. (Pubitemid 34544928)
    • (2002) Solid-State Electronics , vol.46 , Issue.7 , pp. 997-1004
    • Dubois, E.1    Larrieu, G.2
  • 4
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic carbon nanotube field-effect transistors
    • DOI 10.1038/nature01797
    • A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, no. 6949, pp. 654-657, Aug. 2003. (Pubitemid 36987985)
    • (2003) Nature , vol.424 , Issue.6949 , pp. 654-657
    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5
  • 5
    • 76749150089 scopus 로고    scopus 로고
    • Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature
    • Feb.
    • F. Xia, D. B. Farmer, Y.-M. Lin, and P. Avouris, "Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature," Nano Lett., vol. 10, no. 2, pp. 715-718, Feb. 2010.
    • (2010) Nano Lett. , vol.10 , Issue.2 , pp. 715-718
    • Xia, F.1    Farmer, D.B.2    Lin, Y.-M.3    Avouris, P.4
  • 6
    • 33745327664 scopus 로고    scopus 로고
    • Ge/Si nanowire heterostructures as high-performance field-effect transistors
    • DOI 10.1038/nature04796, PII NATURE04796
    • J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, "Ge/Si nanowire heterostructures as high performance field-effect transistors," Nature, vol. 441, no. 7092, pp. 489-493, May 2006. (Pubitemid 44050147)
    • (2006) Nature , vol.441 , Issue.7092 , pp. 489-493
    • Xiang, J.1    Lu, W.2    Hu, Y.3    Wu, Y.4    Yan, H.5    Lieber, C.M.6
  • 7
    • 0038492954 scopus 로고    scopus 로고
    • Physical random-number generator using Schottky MOSFET
    • pt. 1 Apr.
    • T. Asano, Y. Maeda, Y. Nakagawa, and Y. Arima, "Physical random-number generator using Schottky MOSFET," Jpn. J. Appl. Phys., vol. 41, pt. 1, no. 4B, pp. 2306-2313, Apr. 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.4 B , pp. 2306-2313
    • Asano, T.1    Maeda, Y.2    Nakagawa, Y.3    Arima, Y.4
  • 9
    • 79957606231 scopus 로고    scopus 로고
    • CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation
    • Jun.
    • G. Larrieu and E. Dubois, "CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation," IEEE Electron Device Lett., vol. 32, no. 6, pp. 728-730, Jun. 2011.
    • (2011) IEEE Electron Device Lett. , vol.32 , Issue.6 , pp. 728-730
    • Larrieu, G.1    Dubois, E.2
  • 10
    • 29244432508 scopus 로고    scopus 로고
    • Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate
    • DOI 10.1109/TED.2005.859703
    • G. Larrieu and E. Dubois, "Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2720-2726, Dec. 2005. (Pubitemid 41829463)
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.12 , pp. 2720-2726
    • Larrieu, G.1    Dubois, E.2
  • 11
    • 3142672426 scopus 로고    scopus 로고
    • Measurement of low Schottky barrier heights applied to S/D metal-oxide-semiconductor field effect transistors
    • Jul.
    • E. Dubois and G. Larrieu, "Measurement of low Schottky barrier heights applied to S/D metal-oxide-semiconductor field effect transistors," J. Appl. Phys., vol. 96, no. 1, pp. 729-738, Jul. 2004.
    • (2004) J. Appl. Phys. , vol.96 , Issue.1 , pp. 729-738
    • Dubois, E.1    Larrieu, G.2
  • 12
    • 84855432738 scopus 로고    scopus 로고
    • Measuring and analyzing low-frequency noise in nanodevices
    • DOI:10.1038/protex.2010.20
    • N. Clément, K. Nishiguchi, A. Fujiwara, and D. Vuillaume, "Measuring and analyzing low-frequency noise in nanodevices," Protocol Exchange, 2010. DOI:10.1038/protex.2010.20.
    • (2010) Protocol Exchange
    • Clément, N.1    Nishiguchi, K.2    Fujiwara, A.3    Vuillaume, D.4
  • 13
    • 24544459259 scopus 로고
    • 1/f noise is no surface effect
    • Apr.
    • F. N. Hooge, "1/f noise is no surface effect," Phys. Lett. A, vol. 29, no. 3, pp. 139-140, Apr. 1969.
    • (1969) Phys. Lett. A , vol.29 , Issue.3 , pp. 139-140
    • Hooge, F.N.1
  • 14
    • 0026413573 scopus 로고
    • 1/f Noise at room temperature in n-type GaAs grown by molecular beam epitaxy
    • DOI 10.1016/0921-4526(91)90449-O
    • L. Ren and M. R. Leys, "1/f noise at room temperature in n-type GaAs grown by molecular beam epitaxy," Phys. B, vol. 172, no. 3, pp. 319-323, Jun. 1991. (Pubitemid 21699867)
    • (1991) Physica B: Condensed Matter , vol.172 , Issue.3 , pp. 319-323
    • Ren, L.1    Leys, M.R.2
  • 15
    • 56549103860 scopus 로고    scopus 로고
    • What do we certainly know about 1/f noise in MOSTs?
    • Nov.
    • L. K. J. Vandamme and F. N. Hooge, "What do we certainly know about 1/f noise in MOSTs?" IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3070-3085, Nov. 2008.
    • (2008) IEEE Trans. Electron Devices , vol.55 , Issue.11 , pp. 3070-3085
    • Vandamme, L.K.J.1    Hooge, F.N.2
  • 16
    • 49649140939 scopus 로고
    • Discussion of recent experiments on 1/f noise
    • Jul.
    • F. N. Hooge, "Discussion of recent experiments on 1/f noise," Physica, vol. 60, no. 1, pp. 130-144, Jul. 1972.
    • (1972) Physica , vol.60 , Issue.1 , pp. 130-144
    • Hooge, F.N.1
  • 18
    • 0024703054 scopus 로고
    • On the theory of carrier number fluctuations in MOS devices
    • G. Ghibaudo, "On the theory of carrier number fluctuations in MOS devices," Solid State Electron., vol. 32, no. 7, pp. 563-565, Jul. 1989. (Pubitemid 20611976)
    • (1989) Solid-State Electronics , vol.32 , Issue.7 , pp. 563-565
    • Ghibaudo Gerard1
  • 19
    • 0032184369 scopus 로고    scopus 로고
    • 1/F noise in CMOS transistors for analog applications from subthreshold to saturation
    • PII S0038110198001622
    • C. Jakobson, I. Bloom, and Y. Nemirovsky, "1/f noise in CMOS transistors for analog applications from subthreshold to saturation," Solid State Electron., vol. 42, no. 10, pp. 1807-1817, Oct. 1998. (Pubitemid 128403610)
    • (1998) Solid-State Electronics , vol.42 , Issue.10 , pp. 1807-1817
    • Jakobson, C.1    Bloom, I.2    Nemirovsky, Y.3
  • 20
    • 0012278046 scopus 로고
    • Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise
    • M. J. Kirton and M. J. Uren, "Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/f) noise," Adv. Phys., vol. 38, no. 4, pp. 367-468, 1989.
    • (1989) Adv. Phys. , vol.38 , Issue.4 , pp. 367-468
    • Kirton, M.J.1    Uren, M.J.2
  • 21
    • 84880309073 scopus 로고    scopus 로고
    • One-by-one trap activation in silicon nanowire transistors
    • DOI:10.1038/ncomms1092
    • N. Clément, K. Nishiguchi, A. Fujiwara, and D. Vuillaume, "One-by-one trap activation in silicon nanowire transistors," Nat. Commun., vol. 1, p. 92, 2010. DOI:10.1038/ncomms1092.
    • (2010) Nat. Commun. , vol.1 , pp. 92
    • Clément, N.1    Nishiguchi, K.2    Fujiwara, A.3    Vuillaume, D.4
  • 22
    • 78651343244 scopus 로고    scopus 로고
    • A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity
    • Jan.
    • N. Clément, K. Nishiguchi, J.-F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, "A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity," Appl. Phys. Lett., vol. 98, no. 1, pp. 014 104-1-014 104-3, Jan. 2011.
    • (2011) Appl. Phys. Lett. , vol.98 , Issue.1 , pp. 0141041-0141043
    • Clément, N.1    Nishiguchi, K.2    Dufreche, J.-F.3    Guerin, D.4    Fujiwara, A.5    Vuillaume, D.6
  • 23
    • 80052636606 scopus 로고    scopus 로고
    • Evaluation of gate capacitances in the sub-aF range for a chemical field-effect transistor with a Si nanowire channel
    • Sep.
    • N. Clément, K. Nishiguchi, A. Fujiwara, and D. Vuillaume, "Evaluation of gate capacitances in the sub-aF range for a chemical field-effect transistor with a Si nanowire channel," IEEE Trans. Nanotechnol., vol. 10, no. 5, pp. 1172-1179, Sep. 2011.
    • (2011) IEEE Trans. Nanotechnol. , vol.10 , Issue.5 , pp. 1172-1179
    • Clément, N.1    Nishiguchi, K.2    Fujiwara, A.3    Vuillaume, D.4
  • 25
    • 33846862006 scopus 로고    scopus 로고
    • Low-frequency noise in nanoscale ballistic transistors
    • DOI 10.1021/nl062141q
    • J. Tersoff, "Low-frequency noise in nanoscale ballistic transistors," Nano Lett., vol. 7, no. 1, pp. 194-198, Jan. 2007. (Pubitemid 46225852)
    • (2007) Nano Letters , vol.7 , Issue.1 , pp. 194-198
    • Tersoff, J.1
  • 26
    • 0005787995 scopus 로고
    • Some applications of the electron theory of matter
    • O. W. Richardson, "Some applications of the electron theory of matter," Philos. Mag., vol. 23, pp. 594-627, 1912.
    • (1912) Philos. Mag. , vol.23 , pp. 594-627
    • Richardson, O.W.1
  • 28
    • 0015144550 scopus 로고
    • Flicker noise in metal semiconductor Schottky barrier diodes due to multistep tunneling processes
    • Oct.
    • S. T. Hsu, "Flicker noise in metal semiconductor Schottky barrier diodes due to multistep tunneling processes," IEEE Trans. Electron Devices, vol. ED-18, no. 10, pp. 882-887, Oct. 1971.
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , Issue.10 , pp. 882-887
    • Hsu, S.T.1
  • 29
    • 0039578981 scopus 로고
    • 2-implanted and rapid thermal annealed p+-polycrystalline silicon gate metal-oxide- semiconductor structures
    • Dec.
    • 2-implanted and rapid thermal annealed p+-polycrystalline silicon gate metal-oxide-semiconductor structures," Appl. Phys. Lett., vol. 57, no. 24, pp. 2573-2575, Dec. 1990.
    • (1990) Appl. Phys. Lett. , vol.57 , Issue.24 , pp. 2573-2575
    • Lo, G.Q.1    Kwong, D.L.2    Lee, S.3
  • 30
    • 33646042498 scopus 로고    scopus 로고
    • Overview and status of metal S/D Schottky-barrier MOSFET technology
    • Jun.
    • J. M. Larson and J. P. Snyder, "Overview and status of metal S/D Schottky-barrier MOSFET technology," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1048-1058, Jun. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.5 , pp. 1048-1058
    • Larson, J.M.1    Snyder, J.P.2
  • 31
    • 0030193606 scopus 로고    scopus 로고
    • The low-frequency noise behaviour of silicon-on-insulator technologies
    • DOI 10.1016/0038-1101(95)00427-0
    • E. Simoen and C. Claeys, "The low-frequency noise behaviour of silicon-on-insulator technologies," Solid State Electron., vol. 39, no. 7, pp. 949-960, Jul. 1996. (Pubitemid 126360785)
    • (1996) Solid-State Electronics , vol.39 , Issue.7 , pp. 949-960
    • Simoen, E.1    Claeys, C.2
  • 32
    • 40449140009 scopus 로고    scopus 로고
    • Charge noise in liquid-gated single-wall carbon nanotube transistors
    • DOI 10.1021/nl073271h
    • J. Männik, I. Heller, A. M. Jannsens, S. G. Lemay, and C. Dekker, "Charge noise in liquid-gated single-wall carbon nanotube transistors," Nano Lett., vol. 8, no. 2, pp. 685-688, Feb. 2008. (Pubitemid 351346039)
    • (2008) Nano Letters , vol.8 , Issue.2 , pp. 685-688
    • Mannik, J.1    Heller, I.2    Janssens, A.M.3    Lemay, S.G.4    Dekker, C.5
  • 34
    • 0035971671 scopus 로고    scopus 로고
    • Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors
    • DOI 10.1063/1.1360779
    • A. Avellan, W. Krautschneider, and S. Schwantes, "Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 78, no. 18, pp. 2790-2792, Apr. 2001. (Pubitemid 33611447)
    • (2001) Applied Physics Letters , vol.78 , Issue.18 , pp. 2790-2792
    • Avellan, A.1    Krautschneider, W.2    Schwantes, S.3
  • 35
    • 0006931909 scopus 로고    scopus 로고
    • Dielectric polarization noise through the glass transition
    • May
    • N. E. Israeloff, "Dielectric polarization noise through the glass transition," Phys. Rev. B, Condens. Matter, vol. 53, no. 18, pp. R11 913-R11 916, May 1996.
    • (1996) Phys. Rev. B, Condens. Matter , vol.53 , Issue.18
    • Israeloff, N.E.1


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