Microscopic mechanism of 1/f noise in graphene: Role of energy band dispersion

ACS Nano

Volumn 5, Issue 3, 2011, Pages 2075-2081

  Pal, Atindra Nath ^a   Ghatak, Subhamoy ^a   Kochat, Vidya ^a   Sneha, E S ^a   Sampathkumar, Arjun ^a   Raghavan, Srinivasan ^a   Ghosh, Arindam ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

1 f noise; charge impurity scattering; graphene; multilayer; noise

Indexed keywords

1/F NOISE; CARRIER DENSITY; CHARGE IMPURITY SCATTERING; DISTINCTIVE FEATURES; ELECTRICAL RESISTANCES; ELECTRICAL TRANSPORT; ENERGY BAND; ENERGY BAND DISPERSION; FLICKER NOISE; GRAPHENE NANORIBBONS; LOW TEMPERATURES; MICROSCOPIC MECHANISMS; NOISE; NOISE MAGNITUDE; PARABOLIC BANDS; QUANTUM HALL MEASUREMENTS; SINGLE LAYER; THEORETICAL MODELS;

BAND STRUCTURE; FIELD EFFECT TRANSISTORS; MULTILAYERS; PROBES; QUANTUM CHEMISTRY; SPURIOUS SIGNAL NOISE;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTRON TRANSPORT; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRON TRANSPORT; GRAPHITE; MODELS, CHEMICAL; NANOSTRUCTURES;

EID: 79952965537     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn103273n     Document Type: Article

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