Low-frequency noise in graphene field-effect transistors

Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Volumn , Issue , 2011, Pages 234-237

  Rumyantsev, S ^a,b   Liu, G ^c   Stillman, W ^a   Kachorovskii, V Yu ^a,b   Shur, M S ^a   Balandin, A A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of California Riverside   (United States)

Author keywords

degradation; graphene; hysteresis; noise

Indexed keywords

BI-LAYER; GATE VOLTAGES; GRAPHENE TRANSISTORS; LOW-FREQUENCY NOISE; MCWHORTER MODEL; MOBILITY FLUCTUATIONS; NOISE;

FIELD EFFECT TRANSISTORS; THERMAL NOISE;

GRAPHENE;

EID: 80052768305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICNF.2011.5994311     Document Type: Conference Paper

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