Low-frequency noise in graphene field-effect transistors

Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Volumn , Issue , 2011, Pages 234-237

  Rumyantsev, S ^a,b   Liu, G ^c   Stillman, W ^a   Kachorovskii, V Yu ^a,b   Shur, M S ^a   Balandin, A A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of California ^*  (United States)

Author keywords

degradation; graphene; hysteresis; noise

Indexed keywords

BI-LAYER; GATE VOLTAGES; GRAPHENE TRANSISTORS; LOW-FREQUENCY NOISE; MCWHORTER MODEL; MOBILITY FLUCTUATIONS; NOISE;

FIELD EFFECT TRANSISTORS; THERMAL NOISE;

GRAPHENE;

EID: 80052768305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICNF.2011.5994311     Document Type: Conference Paper

References (17)

1. K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H.L. Stormer, "Ultrahigh electron mobility in suspended grapheme",Sol. St. Comm., 146, 351 (2008).
2. P. Blake, R. Yang, S.V. Morozov, F. Schedin, L.A. Ponomarenko, A.A. Zhukov, R.R. Nair, I.V. Grigorieva, K.S. Novoselov, A.K. Geim, "Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point", Sol. St. Comm., 149, 1068 (2009).
3. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C. N. Lau, "Superior Thermal Conductivity of Single-Layer Graphene", Nano Lett., 8, 902 (2008).
4. D. L. Nika, E. P. Pokatilov, A. S. Askerov, A. A. Balandin, "Phonon thermal conduction in graphene: role of Umklapp and edge roughness scattering", Phys. Rev. B 79, 155413 (2009).
5. X. Yang, G. Liu, A.A. Balandin and K. Mohanram, "Triple-mode singletransistor graphene amplifier and its applications", ACS Nano, 4, 5532 (2010).
6. Y. M. Lin, and P. Avouris, "Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices", Nano Lett. 8, 2119 (2008);
7. Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin, S. Rumyantsev, M. Shur and D. Yan, "Flicker noise in bilayer graphene transistors," IEEE Electron Device Letters, 30, 288 (2009)
8. S. Rumyantsev, G. Liu, W. Stillman, M. Shur and A.A. Balandin, "Electrical and noise characteristics of graphene field-effect transistors: Ambient effects and noise sources," J. Physics: Condensed Matter, 22, 395302 (2010).
9. A. N. Pal and A. Ghosh, "Ultralow noise field-effect transistor from multilayer graphene", Appl. Phys. Lett., 95, 082105 (2009).
10. A.N. Pal and A. Ghosh, "Resistance Noise in Electrically Biased Bilayer Graphene",Phys. Rev. Lett. 102, 126805 (2009).
11. S.A. Imam, S. Sabri and T. Szkopek, "Low-frequency noise and hysteresis in graphene field-effect transistors on oxide", Micro & Nano Lett., 5, 37 (2010).
12. G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur and A.A. Balandin, "Low-frequency electronic noise in the double-gate singlelayer graphene transistors," Applied Physics Letters, 95, 033103 (2009).
13. I. Calizo, F. Miao, W. Bao, C. N. Lau, A. A. Balandin, "Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices". Appl. Phys. Lett., 91, 071913 (2007).
14. I. Calizo, Wenzhong Bao, Feng Miao, Chun Ning Lau A. A. Balandin, "The effect of substrates on the Raman spectrum of graphene: grapheneon-sapphire and graphene-on-glass", Appl. Phys. Lett., 91, 20104 (2007).
15. McWhorter, Semiconductor Surface Physics, Univ. of Pennsylvania Press (1957)
16. V.I. Kozub, "low temperature properties of a tunnel junction with an amorphous layer", Sov.Phys. JETP 59, 1303 (1984).)
17. Yu. M. Gal'perin, V.G. Karpov, and V.I. Kozub, "Low-temperature noise in disordered systems in a wide temperature range", Sov.Phys. JETP 68, 648(1989)