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Applied Physics Letters

Volumn 102, Issue 15, 2013, Pages

High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics

(6) Takei, Kuniharu a,b,c Kapadia, Rehan a,b,c Fang, Hui a,b,c Plis, E d Krishna, Sanjay d Javey, Ali a,b,c

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d MSC01 1070 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL TREATMENTS; EPITAXIALLY GROWN; FIELD EFFECT TRANSISTOR (FETS); HIGH-QUALITY INTERFACE; INTERFACE QUALITY; INTERFACE TRAP DENSITY; LAYER TRANSFER PROCESS; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS; PHASE INTERFACES; SURFACE PROPERTIES; ZIRCONIUM ALLOYS;

GATE DIELECTRICS;

EID: 84877116756 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802779 Document Type: Article

Times cited : (36)

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