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Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

Graphene field effect transistors with parylene gate dielectric

(6) Sabri, S S a,b Lvesque P L a,c Aguirre, C M a,d Guillemette, J a,b Martel, R a,c Szkopek, T a,b

a Regroupement Quebecois sur les Materiaux de Pointe (Canada)

b MCGILL UNIVERSITY (Canada)

c UNIVERSITÉ DE MONTRÉAL (Canada)

d ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; SILICON COMPOUNDS; SILICON OXIDES;

AMBIENT CONDITIONS; EXFOLIATED GRAPHENE; FABRICATION AND CHARACTERIZATIONS; GRAPHENE FIELD-EFFECT TRANSISTORS; NEUTRALITY POINT; OPTICAL REFLECTION; ROOM TEMPERATURE MOBILITY; THERMAL SILICON;

FIELD EFFECT TRANSISTORS;

EID: 77956167522 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3273396 Document Type: Article

Times cited : (104)

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