Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 595-597

  Jakabovic J ^a   Kovac J ^a,b   Weis, M ^a   Hasko D ^b   Srnanek R ^a   Valent, P ^a   Resel, R ^c  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

^c GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

AFM; Electrical characterization; Ellipsometry; Organic field effect transistor; Parylene C; Pentacene; Raman spectroscopy; X ray diagnostics

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELECTRON MULTIPLIERS; ELLIPSOMETRY; GATE DIELECTRICS; GATES (TRANSISTOR); PASSIVATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SILICONES; SPECTRUM ANALYSIS;

AFM; ELECTRICAL CHARACTERIZATION; ORGANIC FIELD EFFECT TRANSISTOR; PARYLENE C; PENTACENE; X-RAY DIAGNOSTICS;

FIELD EFFECT TRANSISTORS;

EID: 61349147717     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.029     Document Type: Article

References (8)

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