One-dimensional GaN nanostructures prepared via chemical vapor deposition: Substrate induced size and dimensionality

Ceramics International

Volumn 40, Issue 7 PART A, 2014, Pages 9563-9569

  Abdullah, Q N ^a,b   Yam, F K ^a   Hassan, N K ^b   Qeed, M A ^a   Al Heuseen, K ^c   Bououdina, M ^d   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

^b TIKRIT UNIVERSITY   (Iraq)

^c AL BALQA APPLIED UNIVERSITY   (Jordan)

^d UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

CVD; Defects; GaN Nanostructures; NRs; NWs

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECTS; NANORODS; NANOWIRES; PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION; ZINC SULFIDE;

CHEMICAL VAPOR DEPOSITION METHODS; GAN NANOSTRUCTURES; HEXAGONAL WURTZITE STRUCTURE; NRS; NWS; PHOTOLUMINESCENCE SPECTRUM; STRUCTURAL AND OPTICAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

GALLIUM NITRIDE;

EID: 84900498187     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.02.031     Document Type: Article

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