Room temperature H2 sensing using functionalized GaN nanotubes with ultra low activation energy

International Journal of Hydrogen Energy

Volumn 38, Issue 8, 2013, Pages 3513-3520

  Sahoo, Prasana ^a   Dhara, S ^a   Dash, S ^a   Amirthapandian, S ^a   Prasad, Arun K ^a   Tyagi, A K ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Gallium nitride; Hydrogen sensor; Platinum functionalization

Indexed keywords

AVERAGE DIAMETER; CRYSTALLINE FACETS; DETECTION LIMITS; FUNCTIONALIZATIONS; FUNCTIONALIZED; GAN NANOTUBES; HYDROGEN SENSOR; LOW-ACTIVATION ENERGY; PT NANOCLUSTERS; ROOM TEMPERATURE; ROOM TEMPERATURE H; SCHOTTKY BARRIERS; SENSING PROCESS; SINGLE-STEP SYNTHESIS; WET CHEMICAL ROUTE; WURTZITE GAN;

ACTIVATION ENERGY; NANOTUBES; PLATINUM; SCHOTTKY BARRIER DIODES; VAPORS; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 84874655147     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2012.12.131     Document Type: Article

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