Bulk GaN crystals grown at high pressure as substrates for blue-laser technology

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 9-12

  Czernetzki, R ^a,b   Leszczynski, M ^a,b   Grzegory, I ^a,b   Perlin, P ^a   Prystawko, P ^a   Skierbiszewski, C ^a   Krysko, M ^a,b   Sarzynski, M ^a,b   Wisniewski, P ^a   Nowak, G ^a   Libura, A ^a,b   Grzanka, S ^a,b   Suski, T ^a   Dmowski, L ^a   Litwin Staszewska, E ^a   Bockowski, M ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HIGH POWER LASERS; HIGH PRESSURE EFFECTS IN SOLIDS; OPTICAL PARAMETRIC OSCILLATORS; SUBSTRATES;

BLUE LASER TECHNOLOGY; CRYSTALLOGRAPHIC QUALITY; GALLIUM NITRIDE CRYSTALS; HIGH QUALITY EPITAXIAL STRUCTURES; OPTICAL ELECTRICAL PARAMETERS;

CRYSTAL GROWTH;

EID: 0346885879     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303293     Document Type: Article

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