SCOPUS 정보 검색 플랫폼

Volumn 86, Issue 2, 2011, Pages 201-205

Evolution of GaN nanoflowers from AlN-SiO2 grains on a silicon substrate by chemical vapor reaction

(9) Shin, Min Jeong a Kim, Min Ji a Jeon, Hun Soo a Ahn, Hyung Soo a Yi, Sam Nyung a Ha, Dong Han b Huh, Yoon c Kim, Bong Hwan d Park, Seoung Hwan d

a Korea Maritime University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Research Institute of Industrial Science and Technology (RIST) (South Korea)

d Catholic University of Daegu (South Korea)

Author keywords

GaN; HVPE; Nanoflowers; Nanostructure

Indexed keywords

BRIGHT-FIELD IMAGES; CHEMICAL VAPOR REACTION; CROSS-SECTIONAL SCANNING ELECTRON MICROSCOPIES; FLOW RATIOS; FORMATION MECHANISM; GAN; GAS CONCENTRATION; HVPE; HYDRIDE VAPOR PHASE EPITAXY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI SUBSTRATES; SILICON SUBSTRATES;

GALLIUM NITRIDE; NANORODS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

NANOFLOWERS;

EID: 80051780854 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2011.06.006 Document Type: Article

Times cited : (4)

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