Synthesis and field emission properties of GaN nanowires

Applied Surface Science

Volumn 257, Issue 24, 2011, Pages 10850-10854

  Li, Enling ^a   Cui, Zhen ^a   Dai, Yuanbin ^a   Zhao, Danna ^a   Zhao, Tao ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Chemical vapor deposition (CVD); Field emission; GaN nanowire; Open electric field

Indexed keywords

ELECTRIC FIELDS; FIELD EMISSION; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NANOWIRES; NICKEL COATINGS; SILICON; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CHEMICAL VAPOR DEPOSITIONS (CVD); CRYSTALLINE QUALITY; EMISSION CURRENT DENSITY; FIELD EMISSION PROPERTY; FIELD ENHANCEMENT FACTOR; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; NICKEL COATED;

CHEMICAL VAPOR DEPOSITION;

EID: 80052920161     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.07.120     Document Type: Article

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