Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films

Nano Letters

Volumn 12, Issue 7, 2012, Pages 3851-3856

  Hu, Youfan ^a   Zhang, Yan ^a   Lin, Long ^a   Ding, Yong ^a   Zhu, Guang ^a   Wang, Zhong Lin ^a,b  

^a Georgia Institute of Technology   (United States)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

electroluminescence; GaN film; piezo phototronic effect

Indexed keywords

ACCEPTOR STATE; APPLIED STRAIN; C-AXIS ORIENTATIONS; CHANGING TRENDS; ELECTROLUMINESCENCE PROPERTIES; EXTERNAL QUANTUM EFFICIENCY; EXTREME VALUE; GAN FILM; INDIUM TIN OXIDE; INDUCED POLARIZATION; MECHANICAL DEFORMATION; METAL STRUCTURES; MG-DOPING; MINORITY CARRIER INJECTION; P-TYPE GAN; PIEZO-PHOTOTRONIC EFFECT; PIEZOELECTRIC CHARGE; WORKING ENVIRONMENT;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; STRAIN; THIN FILMS; TIN; TIN OXIDES; TRANSPORT PROPERTIES;

ELECTROLUMINESCENCE;

EID: 84863818961     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl301879f     Document Type: Article

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