New twin structures in GaN nanowires

Journal of Physical Chemistry C

Volumn 117, Issue 24, 2013, Pages 12895-12901

  Dai, Sheng ^a   Zhao, Jiong ^a   He, Mo Rigen ^a   Wu, Hao ^a   Xie, Lin ^a   Zhu, Jing ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH MECHANISMS; MOLECULAR DYNAMICS SIMULATIONS; SINGLE-CRYSTALLINE; TWIN BOUNDARIES; TWIN STRUCTURE;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; MOLECULAR DYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

NANOWIRES;

EID: 84879456725     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp403263u     Document Type: Article

References (49)

1. Nakamura, S.; Pearton, S.; Fasol, G. The Blue Laser Diode: The Complete Story; Springer-Verlag: Berlin, 2000.
2. Pearton, S.; Ren, F. GaN Electronic Adv. Mater. 2000, 12, 1571-1580
3. Nakamura, S. The Roles of Structure Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes Science 1998, 281, 956-961
4. Huang, Y.; Lieber, C. M. Integrated Nanoscale Electronics and Optoelectronics: Exploring Nanoscale Science and Technology through Semiconductor Nanowires Pure Appl. Chem. 2004, 76, 2051-2068
5. Qian, F.; Li, Y.; Gradecak, S.; Wang, D. L.; Barrelet, C. J.; Lieber, C. M. Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics Nano Lett. 2004, 4, 1975-1979
6. Yang, P. D. The Chemistry and Physics of Semiconductor Nanowires MRS Bull. 2005, 30, 85-91
7. Huang, Y.; Duan, X. F.; Cui, Y.; Lieber, C. M. Gallium Nitride Nanowire Nanodevices Nano Lett. 2002, 2, 101-104
8. Uenoyama, T. Excitonic Enhancement of Optical Gain in Quantum Wells Phys. Rev. B 1995, 51, 10228-10231
9. Xia, Y.; Yang, P.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications Adv. Mater. 2003, 15, 353-389
10. Kim, J. R.; So, H. M.; Park, J. W.; Kim, J. J.; Kim, J.; Lee, C. J.; Lyu, S. C. Electrical Transport Properties of Individual Gallium Nitride Nanowires Synthesized by Chemical-Vapor-Deposition Appl. Phys. Lett. 2002, 80, 3548-3550
11. Lee, S. K.; Kim, T. H.; Lee, S. Y.; Choi, K. C.; Yang, P. D. High-Brightness Gallium Nitride Nanowire UV-Blue Light Emitting Diodes Philos. Mag. 2007, 87, 2105-2115
12. Johnson, J. C.; Choi, H. J.; Knutsen, K. P.; Schaller, R. D.; Yang, P. D.; Saykally, R. J. Single Gallium Nitride Nanowire Lasers Nat. Mater. 2002, 1, 106-110
13. Han, S.; Jin, W.; Zhang, D.; Tang, T.; Li, C.; Liu, X.; Liu, Z.; Lei, B.; Zhou, C. Photoconduction Studies on GaN Nanowire Transistors under UV and Polarized UV Illumination Chem. Phys. Lett. 2004, 389, 176-180
14. Duan, X. F.; Lieber, C. M. Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires J. Am. Chem. Soc. 2000, 122, 188-189
15. Kuykendall, T.; Pauzauskie, P. J.; Zhang, Y.; Goldberger, J.; Sirbuly, D.; Denlinger, J.; Yang, P. D. Crystallographic Alignment of High-Density Gallium Nitride Nanowire Arrays Nat. Mater. 2004, 3, 524-528
16. Kim, H.; Kim, D. S.; Kim, D. Y.; Kang, T. W.; Cho, Y. H.; Chung, K. S. Growth and Characterization of Single-Crystal GaN Nanorods by Hydride Vapor Phase Epitaxy Appl. Phys. Lett. 2002, 81, 2193-2195
17. Deb, P.; Kim, H.; Rawat, V.; Oliver, M.; Kim, S.; Marshall, M.; Stach, E.; Sands, T. Faceted and Vertically Aligned GaN Nanorod Arrays Fabricated without Catalysts or Lithography Nano Lett. 2005, 5, 1847-1851
18. Furtmayr, F.; Vielemeyer, M.; Stutzmann, M.; Arbiol, J.; Estradé, S.; Peiró, F.; Morante, J. R.; Eickhoff, M. Nucleation and Growth of GaN Nanorods on Si (111) Surfaces by Plasma-Assitant Molecular Beam Epitaxy-The Influence of Si- and Mg-Doping J. Appl. Phys. 2008, 104, 034309
19. Arbiol, J.; Estrade, S.; Prades, J. D.; Cirera, A.; Furtmayr, F.; Stark, C.; Laufer, A.; Stutzmann, M.; Eickhoff, M.; Gass, M. H. Triple-Twin Domains in Mg Doped GaN Wurtzite Nanowires: Structural and Electronic Properties of this Zinc-Blende-Like Stacking Nanotechnology 2009, 20, 145704
20. Chen, C. C.; Yeh, C. C. Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires Adv. Mater. 2000, 12, 738-741
21. Chen, C.C; Yeh, C. C.; Chen, C. H.; Yu, M. Y.; Liu, H. L.; Wu, J. J.; Chen, K. H.; Chen, L. C.; Peng, J. Y.; Chen, Y. F. Catalytic Growth and Characterization of Gallium Nitride Nanowires J. Am. Chem. Soc. 2001, 123, 2791-2798
22. Nam, C. Y.; Tham, D.; Fischer, J. E. Effect of the Polar Surface on GaN Nanostructure Morphology and Growth Orientation Appl. Phys. Lett. 2004, 85, 5676-5678
23. Tham, D.; Nam, C. Y.; Fischer, J. E. Defects in GaN Nanowires Adv. Funct. Mater. 2006, 16, 1197-1202
24. Liu, B.; Bando, Y.; Tang, C.; Xu, F.; Hu, J.; Golberg, D. Needlelike Bicrystalline GaN Nanowires with Excellent Field Emission Properties J. Phys. Chem. B 2005, 109, 17082-17085
25. Han, W.; Fan, S.; Li, Q.; Hu, Y. Synthesis of Gallium Nitride Nanorods through a Carbon Nanotube-Confined Reaction Science 1997, 277, 1287-1289
26. Zhu, J.; Fan, S. J. Nanostructure of GaN and SiC Nanowires Based on Carbon Nanotubes Mater. Res. 1999, 4, 1175-1777
27. Bandic, Z. Z.; McGill, T. C.; Ikonic, Z. Electronic Structure of GaN Stacking Faults Phys. Rev. B 1997, 56, 3564-3566
28. Chu, W. H.; Chiang, H. W.; Liu, C. P.; Lai, Y. F.; Hsu, K. Y. Defect-Induced Negative Differential Resistance of GaN Nanowires Measured by Conductive Atomic Force Microscopy Appl. Phys. Lett. 2009, 94, 182101
29. Chen, Z.; Cao, C.; Zhu, H. Oriented Bicrystalline GaN Nanowire Arrays Suitable for Field Emission Applications Chem. Vap. Deposition 2007, 13, 527-532
30. Wagner, R. S.; Ellis, W. C. Vapor-Liquid-Solid Mechanism of Single Crystal Growth Appl. Phys. Lett. 1964, 4, 89-90
31. Nam, C. Y.; Jaroenapibal, P.; Tham, D.; Luzzi, D. E.; Evoy, S.; Fischer, J. E. Diameter-Dependent Electromechanical Properties of GaN Nanowires Nano Lett. 2006, 6, 153-158
32. Kuykendall, T.; Pauzauskie, P.; Lee, S.; Zhang, Y.; Goldberger, J.; Yang, P. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections Nano Lett. 2003, 3, 1063-1066
33. Zhou, S. M.; Zhang, X. H.; Meng, X. M.; Fan, X.; Zou, K.; Wu, S. K. The Novel Bicrystalline GaN Nanorods Mater. Lett. 2004, 58, 3578-3581
34. Bethe, H. Handbook of Physics; Springer: Berlin, 1933.
35. Cowley, J. M. Diffraction Physics; North-Holland: New York, 1975.
36. O'Keefe, M. A.; Kilaas, R. Advances in High-Resolution Image Simulation Scanning Microsc. 1988, 2, 225-244
37. Plimpton, S. J. Fast Parallel Algorithms for Short-Range Molecular Dynamics J. Comput. Phys. 1995, 117, 1-19
38. http://lammps.sandia.gov.
39. Béré, A.; Serra, A. Atomic Structures of Twin Boundaries in GaN Phys. Rev. B 2003, 68, 033305
40. Béré, A.; Serra, A. Structure of [0001] Tilt Boundaries in GaN Obtained by Simulation with Empirical Potentials Phys. Rev. B 2002, 66, 085330
41. Béré, A.; Serra, A. On the Atomic Structures, Mobility and Interactions of Extended Defects in GaN: Dislocations, Tilt and Twin Boundaries Philos. Mag. 2006, 86, 2159-2192
42. Zhang, X.; Anderoglu, O.; Hoagland, R. G.; Misra, A. Nanoscale Growth Twins in Sputtered Metal Films JOM 2008, 60, 75-78
43. Xiao, R. F.; Alexander, J. I. D.; Rosenberg, F. Growth Morphologies of Crystal Surfaces Phys. Rev. A 1991, 43, 2977-2992
44. Wagner, R. S. On the Growth of Germanium Dendrites Acta Metall. 1960, 8, 57-60
45. Hamilton, D. R.; Seidensticker, R. G. Propagation Mechanism of Germanium Dendrites J. Appl. Phys. 1960, 31, 1165-1168
46. Fu, X.; Jiang, J.; Liu, C.; Yu, Z. Y.; Lea, S.; Yuan, J. Re-Entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires Chin. Phys. Lett. 2009, 26, 086110
47. Ding, Y.; Wang, Z. L. Structures of Planar Defects in ZnO Nanobelts and Nanowires Micron 2009, 40, 335-342
48. Liu, B. D.; Bando, Y.; Liao, M. Y.; Tang, C. C.; Mitome, M.; Golberg, D. Bicrystalline ZnS Microbelts Cryst. Growth Des. 2009, 9, 2790-2793
49. Shan, X.; Zhang, X.; Gao, J.; You, L.; Xu, H.; Xu, J.; Yu, D.; Ye, H. Self-Assembled [2-1-10] Twin Junctions Formed by Intercrossing of ZnO Nanowires J. Phys. Chem. C 2009, 113, 18014-18019