Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Optics Express

Volumn 22, Issue SUPPL. 3, 2014, Pages

  Shi, Chentian ^a   Zhang, Chunfeng ^a   Yang, Fan ^a   Park, Min Joo ^b   Kwak, Joon Seop ^b   Jung, Sukkoo ^c   Choi, Yoon Ho ^c   Wang, Xiaoyong ^a   Xiao, Min ^a,d  

^a NANJING UNIVERSITY   (China)

^b Sunchon National University   (South Korea)

^c LG Electronics Inc   (South Korea)

^d UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; LIGHT EMITTING DIODES; NANORODS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER CONFINEMENTS; DEFECT RECOMBINATIONS; EFFICIENCY DROOPS; EMISSION EFFICIENCIES; HIGH POWER APPLICATIONS; INGAN/GAN QWS; NET EFFECT; SURFACE TRAPPING;

EFFICIENCY;

EID: 84899813458     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.00A790     Document Type: Article

References (46)

1. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting," Nat. Photonics 3(4), 180-182 (2009).
2. H. X. Jiang and J. Y. Lin, "Nitride micro-LEDs and beyond-a decade progress review," Opt. Express 21(S3 Suppl 3), A475-A484 (2013).
3. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in GaN-based light-emitting diodes," Appl. Phys. Lett. 91(18), 183507 (2007).
4. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence," Appl. Phys. Lett. 91(14), 141101 (2007).
5. A. G. Smart, "New clues to LEDs' efficiency droop," Phys. Today 66(7), 12-14 (2013).
6. J. Cho, E. Schubert, and J. K. Kim, "Efficiency droop in light-emitting diodes: Challenges and countermeasures," Laser Photon. Rev. 7(3), 408-421 (2013).
7. J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop," Phys. Rev. Lett. 110(17), 177406 (2013).
8. X. Ni, Q. Fan, R. Shimada, U. Oezguer, and H. Morkoc, "Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells," Appl. Phys. Lett. 93(17), 171113 (2008).
9. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, "Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop," Appl. Phys. Lett. 93(4), 041102 (2008).
10. J. Xie, X. Ni, Q. Fan, R. Shimada, U. Ozgur, and H. Morkoc, "On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers," Appl. Phys. Lett. 93(12), 121107 (2008).
11. X. Li, X. Ni, J. Lee, M. Wu, U. Ozgur, H. Morkoc, T. Paskova, G. Mulholland, and K. R. Evans, "Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes," Appl. Phys. Lett. 95(12), 121103 (2009).
12. S.-C. Ling, T.-C. Lu, S.-P. Chang, J.-R. Chen, H.-C. Kuo, and S.-C. Wang, "Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes," Appl. Phys. Lett. 96(23), 231101 (2010).
13. C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki, "c," Appl. Phys. Exp. 4 (2011).
14. H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, A. Korinek, G. A. Botton, and Z. Mi, "Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes," Nano Lett. 12(3), 1317-1323 (2012).
15. F. Akyol, D. N. Nath, S. Krishnamoorthy, P. S. Park, and S. Rajan, "Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes," Appl. Phys. Lett. 100(11), 111118 (2012).
16. R. Vaxenburg, E. Lifshitz, and A. Efros, "Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes," Appl. Phys. Lett. 102(3), 031120 (2013).
17. W. Guo, M. Zhang, P. Bhattacharya, and J. Heo, "Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics," Nano Lett. 11(4), 1434-1438 (2011).
18. J. Hader, J. V. Moloney, and S. W. Koch, "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes," Appl. Phys. Lett. 96(22), 221106 (2010).
19. J. Hader, J. V. Moloney, and S. W. Koch, "Temperature-dependence of the internal efficiency droop in GaNbased diodes," Appl. Phys. Lett. 99(18), 181127 (2011).
20. F. Yang, C. Zhang, C. Shi, M. Joo Park, J. Seop Kwak, S. Jung, Y.-H. Choi, X. Wu, X. Wang, and M. Xiao, "Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells," Appl. Phys. Lett. 103(12), 123506 (2013).
21. B. Jiang, C. Zhang, X. Wang, M. J. Park, J. S. Kwak, J. Xu, H. Zhang, J. Zhang, F. Xue, and M. Xiao, "The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals," Adv. Funct. Mater. 22(15), 3146-3152 (2012).
22. J. Xiao, Y. Wang, Z. Hua, X. Wang, C. Zhang, and M. Xiao, "Carrier multiplication in semiconductor nanocrystals detected by energy transfer to organic dye molecules," Nat. Commun. 3, 1170 (2012).
23. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors," Nat. Mater. 5(10), 810-816 (2006).
24. J. Danhof, H. M. Solowan, U. T. Schwarz, A. Kaneta, Y. Kawakami, D. Schiavon, T. Meyer, and M. Peter, "Lateral charge carrier diffusion in InGaN quantum wells," Phys. Status Solid B 249(3), 480-484 (2012).
25. S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science 281(5379), 956-961 (1998).
26. B. Jiang, C. Zhang, X. Wang, F. Xue, M. J. Park, J. S. Kwak, and M. Xiao, "Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods," Opt. Express 20(12), 13478-13487 (2012).
27. W. Guo, M. Zhang, A. Banerjee, and P. Bhattacharya, "Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy," Nano Lett. 10(9), 3355-3359 (2010).
28. H. M. Kim, Y. H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, "High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays," Nano Lett. 4(6), 1059-1062 (2004).
29. Y. R. Wu, C. Chiu, C. Y. Chang, P. Yu, and H. C. Kuo, "Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs," IEEE J. Sel. Top. Quantum Electron. 15(4), 1226-1233 (2009).
30. R. Smith, B. Liu, J. Bai, and T. Wang, "Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters," Nano Lett. 13(7), 3042-3047 (2013).
31. S. Sonderegger, E. Feltin, M. Merano, A. Crottini, J. F. Carlin, R. Sachot, B. Deveaud, N. Grandjean, and J. D. Ganiere, "High spatial resolution picosecond cathodoluminescence of InGaN quantum wells," Appl. Phys. Lett. 89(23), 232109 (2006).
32. S. Chichibu, K. Wada, and S. Nakamura, "Spatially resolved cathodoluminescence spectra of InGaN quantum wells," Appl. Phys. Lett. 71(16), 2346-2348 (1997).
33. J. Danhof, U. T. Schwarz, A. Kaneta, and Y. Kawakami, "Time-of-flight measurements of charge carrier diffusion in InxGa1-xN/GaN quantum wells," Phys. Rev. B 84(3), 035324 (2011).
34. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett. 69(27), 4188-4190 (1996).
35. S. Hammersley, D. Watson-Parris, P. Dawson, M. J. Godfrey, T. J. Badcock, M. J. Kappers, C. McAleese, R. A. Oliver, and C. J. Humphreys, "The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures," J. Appl. Phys. 111(8), 083512 (2012).
36. M. J. Davies, T. J. Badcock, P. Dawson, M. J. Kappers, R. A. Oliver, and C. J. Humphreys, "High excitation carrier density recombination dynamics of InGaN/GaNquantum well structures: Possible relevance to efficiency droop," Appl. Phys. Lett. 102(2), 022106 (2013).
37. S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, Y. S. Lin, C. Hsu, K. J. Ma, and J. I. Chyi, "Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures," J. Appl. Phys. 92(8), 4441-4448 (2002).
38. S. W. Feng, Y. C. Cheng, Y. Y. Chung, C. C. Yang, M. H. Mao, Y. S. Lin, K. J. Ma, and J. I. Chyi, "Multiplecomponent photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures," Appl. Phys. Lett. 80(23), 4375-4377 (2002).
39. Q. Li, K. R. Westlake, M. H. Crawford, S. R. Lee, D. D. Koleske, J. J. Figiel, K. C. Cross, S. Fathololoumi, Z. Mi, and G. T. Wang, "Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays," Opt. Express 19(25), 25528-25534 (2011).
40. C. C. S. Chan, B. P. L. Reid, R. A. Taylor, Y. Zhuang, P. A. Shields, D. W. E. Allsopp, and W. Jia, "Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale," Appl. Phys. Lett. 102(11), 111906 (2013).
41. H. Masui, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges," IEEE Trans. Electron. Dev. 57(1), 88-100 (2010).
42. D. F. Feezell, M. C. Schmidt, S. P. DenBaars, and S. Nakamura, "Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes," MRS Bull. 34(05), 318-323 (2009).
43. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, "Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells," Jpn. J. Appl. Phys. 36(Part 2, No. 4A), L382-L385 (1997).
44. T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu, "Localized exciton dynamics in nonpolar (1120) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth," Appl. Phys. Lett. 86(15), 151918 (2005).
45. E. Sari, S. Nizamoglu, J. H. Choi, S. J. Lee, K. H. Baik, I. H. Lee, J. H. Baek, S. M. Hwang, and H. V. Demir, "Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures," Opt. Express 19(6), 5442-5450 (2011).
46. G. You, W. Guo, C. Zhang, P. Bhattacharya, R. Henderson, and J. Xu, "Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires," Appl. Phys. Lett. 102(9), 091105 (2013).