Lateral charge carrier diffusion in InGaN quantum wells

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 3, 2012, Pages 480-484

  Danhof, J ^a,b   Solowan, H M ^a,b   Schwarz, U T ^a,b   Kaneta, A ^c   Kawakami, Y ^c   Schiavon, D ^d   Meyer, T ^d   Peter, M ^d  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c KYOTO UNIVERSITY   (Japan)

^d OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

InGaN quantum wells; Lateral charge carrier diffusion; Microphotoluminescence; Time resolved photoluminescence

Indexed keywords

CARRIER TRANSPORT; DIFFUSION; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; INDIUM COMPOUNDS; LIGHT EMISSION; QUANTUM CHEMISTRY; SEMICONDUCTOR ALLOYS;

CARRIER DIFFUSIONS; DIFFUSION CONSTANT; INDIUM GALLIUM NITRIDE; INGAN QUANTUM WELLS; INGAN/GAN MULTI-QUANTUM WELL; MATERIAL QUALITY; MICROPHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84857381397     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100476     Document Type: Article

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