Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures

Optics Express

Volumn 19, Issue 6, 2011, Pages 5442-5450

  Sari, Emre ^a   Nizamoglu, Sedat ^a   Choi, Jung Hun ^b   Lee, Seung Jae ^c   Baik, Kwang Hyeon ^d   Lee, In Hwan ^b   Baek, Jong Hyeob ^c   Hwang, Sung Min ^d   Demir, Hilmi Volkan ^a,e  

^a BILKENT UNIVERSITY   (Turkey)

^b Chonbuk National University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d Korea Electronic Technology Institute (KETI)   (South Korea)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CRYSTALS; ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT ABSORPTION; NUMERICAL ANALYSIS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STARK EFFECT;

A-PLANE GAN; CARRIER DYNAMICS; EXTERNAL ELECTRIC FIELD; FERMI'S GOLDEN RULE; HETEROSTRUCTURES; HOLE WAVE FUNCTIONS; INGAN/GAN; MATERIALS SYSTEMS; NON-POLAR; NONPOLAR STRUCTURES; OPTICAL ABSORPTION; PLANE SAPPHIRE; POLAR STRUCTURES; QUANTUM CONFINED STARK EFFECT; QUANTUM HETEROSTRUCTURES; TIME-RESOLVED PHOTOLUMINESCENCE;

ENGINEERING EXHIBITIONS;

EID: 79952592601     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.005442     Document Type: Article

References (21)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High power InGaN single-quantum-well-structure blue and violet light-emitting diodes", Appl. Phys. Lett. 67(13), 1868-1870 (1995).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes", Appl. Phys. Lett. 69(26), 4056-4058 (1996). (Pubitemid 126647935)
3. S. Nizamoglu, G. Zengin, and H. V. Demir, "Color-converting combinations of nanocrystal emitters for warmwhite light generation with high color rendering index", Appl. Phys. Lett. 92(3), 031102-031104 (2008).
4. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, "III-nitride blue microdisplays", Appl. Phys. Lett. 78(9), 1303-1305 (2001). (Pubitemid 33662272)
5. E. Sari, S. Nizamoglu, T. Ozel, and H. V. Demir, "Blue quantum electroabsorption modulators based on reversed quantum confined Stark effect with blueshift", Appl. Phys. Lett. 90(1), 011101(2007).
6. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, "High-speed, lownoise metal-semiconductor-metal ultraviolet photodetectors based on GaN", Appl. Phys. Lett. 74(5), 762(1999).
7. J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.-J. Choi, and P. Yang, "Single-crystal gallium nitride nanotubes", Nature 422(6932), 599-602 (2003). (Pubitemid 36460409)
8. B. Monemar, and G. Pozina, ""Group III-nitride based hetero and quantum structures", Prog. Quantum Electron. 24(6), 239-290 (2000).
9. C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Liu, E. A. Preble, and D. Hanser, "Lightemitting diode development on polar and non-polar GaN substrates", J. Cryst. Growth 310(17), 3987-3991 (2008).
10. T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, "Nonpolar a-and m-plane bulk GaN sliced from boules: structural and optical characteristics", Phys. Status Solidi 4(7), 1610-1642 (2007).
11. K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, "Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals", Jpn. J. Appl. Phys. 45(45), L1 197-L1199 (2006). (Pubitemid 47434532)
12. M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes", Jpn. J. Appl. Phys. 46(9), L190-L191 (2007). (Pubitemid 47252437)
13. S.-M. Hwang, Y.-G. Seo, K.-H. Baik, I.-S. Cho, J.-H. Baek, S.-K. Jung, T. G. Kim, and M.-W. Cho, "Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate", Appl. Phys. Lett. 95(7), 071101(2009).
14. G. A. Garrett, H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", Phys. Status Solidi C 6 (S2), S800-S803 (2009).
15. M. Häberlen, T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver, "Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth", J. Appl. Phys. 108(3), 033523-033529 (2010).
16. 1-xN (0001) epilayers: Effects of high fluence excitation", Appl. Phys. Lett. 88(12), 121128(2006).
17. E. Sari, S. Nizamoglu, I.-H. Lee, J.-H. Baek, and H. V. Demir, "Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields", Appl. Phys. Lett. 94(21), 211107(2009).
18. 1-xN/GaN quantum wells", Phys. Rev. B 66(3), 035334(2002).
19. Y. D. Jho, Y. S. Yahng, E. Oh, and D. S. Kim, "Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells", Appl. Phys. Lett. 79(8), 1130(2001). (Pubitemid 32819439)
20. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, "Auger recombination in InGaN measured by photoluminescence", Appl. Phys. Lett. 91(14), 141101(2007). (Pubitemid 47534188)
21. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric field dependence of optical absorption near the band gap of quantum-well structures", Phys. Rev. B Condens. Matter 32(2), 1043-1060 (1985).