Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Onuma, T ^a,b   Chakraborty, A ^e   Haskell, B A ^e   Keller, S ^e   Denbaars, S P ^e   Speck, J S ^e   Nakamura, S ^e   Mishra, U K ^e   Sota, T ^c   Chichibu, S F ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; LASER BEAM EFFECTS; LASER MODE LOCKING; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SOLID STATE LASERS;

LATERAL EPITAXIAL OVERGROWTH; LOCALIZED EXCITON DYNAMICS; NEAR BAND EDGE (NBE) EMISSION; THERMALIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20844446950     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900947     Document Type: Article

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