Electrical properties of the thin-film transistor with an indium-gallium-zinc oxide channel and an aluminium oxide gate dielectric stack formed by solution-based atmospheric pressure deposition

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 851-853

  Furuta, Mamoru ^a   Kawaharamura, Toshiyuki ^a   Wang, Depang ^a   Toda, Tatsuya ^a   Hirao, Takashi ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Aluminum oxide; chemical vapor deposition; indium gallium zinc oxide (IGZO); thin film transistor (TFT)

Indexed keywords

ALUMINIUM OXIDE; ALUMINUM OXIDES; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BREAKDOWN ELECTRIC FIELD; DEPOSITION METHODS; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC STACKS; INDIUM-GALLIUM-ZINC OXIDE (IGZO); MATERIAL RESEARCH; MULTI-COMPONENT OXIDES; ON/OFF CURRENT RATIO; THIN-FILM TRANSISTOR (TFTS);

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GALLIUM; GATE DIELECTRICS; INDIUM; OXIDES; VAPORS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84861711119     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2192902     Document Type: Article

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