Improvement of on-off-current ratio in TiOx active-channel TFTs using N2O plasma treatment

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 362-364

  Park, Jae Woo ^a   Lee, Dongyun ^a   Kwon, Hakyoung ^b   Yoo, Seunghyup ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b ASM GK Ltd   (South Korea)

Author keywords

N2O plasma treatment; On off current ratio; Plasma enhanced atomic layer deposition (PEALD); Thin film transistor (TFT); Titanium oxide (TiOx)

Indexed keywords

HIGH-POWER; LOW-POWER; N2O PLASMA TREATMENT; ON CURRENTS; ON-OFF RATIOS; ON-OFF-CURRENT RATIO; ORDERS OF MAGNITUDES; PLASMA-ENHANCED ATOMIC-LAYER DEPOSITION (PEALD); SELECTIVE OXIDATIONS; THIN-FILM TRANSISTOR (TFT); TRANSFER CHARACTERISTICS;

PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TITANIUM; TITANIUM OXIDES;

PLASMA DEPOSITION;

EID: 67349115977     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013647     Document Type: Article

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