SiO x interlayer to enhance the performance of InGaZnO-TFT with AlO x gate insulator

Current Applied Physics

Volumn 12, Issue 5, 2012, Pages 1288-1291

  Li, Jun ^a   Zhou, Fan ^a   Lin, Hua Ping ^a   Zhu, Wen Qing ^a   Zhang, Jian Hua ^a   Jiang, Xue Yin ^a   Zhang, Zhi Lin ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Bias stability; InGaZnO; SiO x interlayer; Thin film transistor

Indexed keywords

ALUMINUM OXIDES; BIAS STABILITY; ELECTRICAL CHARACTERISTIC; GATE INSULATOR; HIGH QUALITY; INGAZNO; PERFORMANCE IMPROVEMENTS; SATURATION MOBILITY; SIO X INTERLAYER; TRAP DENSITY; VOLTAGE STRESS;

CONTACT RESISTANCE; INDIUM; INTERFACES (MATERIALS); SURFACE PROPERTIES;

THIN FILM TRANSISTORS;

EID: 84861579141     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2012.03.013     Document Type: Article

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