Characteristics and time-dependent instability of Ga-Doped ZnO thin film transistor fabricated by radio frequency magnetron sputtering

Chinese Physics Letters

Volumn 28, Issue 12, 2011, Pages

  Huang, Hai Qin ^a   Sun, Jian ^b   Liu, Feng Juan ^a   Zhao, Jian Wei ^a   Hu, Zuo Fu ^a   Li, Zhen Jun ^a   Zhang, Xi Qing ^a   Wang, Yong Sheng ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

^b Beijing BOE Optoelectronics Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; SILICA; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

C. THIN FILM TRANSISTOR (TFT); DOPED ZNO THIN FILMS; ELECTRICAL CHARACTERISTIC; GA-DOPED; GA-DOPED ZNO; ON-OFF RATIO; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SI SUBSTRATES; TIME DEPENDENT; ZNO THIN FILM;

THIN FILM TRANSISTORS;

EID: 83455259967     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/12/128502     Document Type: Article

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