Study of Ti addition in channel layers for In-Zn-O thin film transistors

Applied Surface Science

Volumn 258, Issue 4, 2011, Pages 1460-1463

  Yao, Qijun ^a,b   Li, Shuxin ^a   Zhang, Qun ^b  

^a TianMa Microelectronics Co Ltd   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

Indium oxide; Pulsed plasma deposition; Thin film transistors; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; FIELD EFFECT TRANSISTORS; FILM GROWTH; II-VI SEMICONDUCTORS; OXYGEN VACANCIES; PLASMA DEPOSITION; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; HIGH-CONTENT; INDIUM OXIDE; POSITIVE SHIFT; PULSED PLASMA DEPOSITION; TI ADDITION; TI-INCORPORATION;

INDIUM COMPOUNDS;

EID: 81555219170     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.09.104     Document Type: Article

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