Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150 °c

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Xu, Xiaoli ^a   Cui, Qingyu ^a   Jin, Yizheng ^b   Guo, Xiaojun ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS PRECURSOR; DEVICE PERFORMANCE; DIELECTRIC LAYER; FIELD-EFFECT MOBILITIES; LOW VOLTAGES; LOW-VOLTAGE; ON/OFF CURRENT RATIO; PROCESS TEMPERATURE; SOLUTION-PROCESSED; ULTRA-THIN; ULTRAVIOLET IRRADIATIONS; ZINC COMPLEX; ZINC OXIDE (ZNO); ZNO;

GATE DIELECTRICS; SOL-GEL PROCESS; THIN FILM TRANSISTORS; ZIRCONIA;

ZINC OXIDE;

EID: 84870556267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769091     Document Type: Article

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