A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

Journal of Applied Physics

Volumn 115, Issue 13, 2014, Pages

  Jovanovic B ^a   Brum, R M ^a   Torres, L ^a  

^a LIRMM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CACHE MEMORY; CMOS INTEGRATED CIRCUITS; CYTOLOGY; ENERGY UTILIZATION; FIELD PROGRAMMABLE GATE ARRAYS (FPGA); MAGNETIC DEVICES; MAGNETIC MOMENTS; MAGNETIC STORAGE; MICROELECTRONICS; MICROPROCESSOR CHIPS; MOS DEVICES; QUANTUM ELECTRONICS;

FULLY DEPLETED SILICON-ON-INSULATOR; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; MANUFACTURING PROCESS; METAL OXIDE SEMICONDUCTOR; RADIATION IMMUNITY; SILICON-BASED DEVICES; SPIN TRANSFER TORQUE;

CELLS;

EID: 84898045356     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4870599     Document Type: Article

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