Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Kim, Woojin ^a   Jeong, J H ^a   Kim, Y ^a   Lim, W C ^a   Kim, J H ^a   Park, J H ^a   Shin, H J ^a   Park, Y S ^a   Kim, K S ^a   Park, S H ^a   Lee, Y J ^a   Kim, K W ^a   Kwon, H J ^a   Park, H L ^a   Ahn, H S ^a   Oh, S C ^a   Lee, J E ^a   Park, S O ^a   Choi, S ^a   Kang, H K ^a   Chung, C ^a   more..

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL MEMORIES; DOWN-SCALING; FEATURE SIZES; INTEGRATION PROCESS; INTERFACE ANISOTROPY; SPIN TRANSFER TORQUE;

ELECTRON DEVICES; INTERFACES (MATERIALS);

MRAM DEVICES;

EID: 84863026711     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131602     Document Type: Conference Paper

References (7)

1. T. Kishi et al, "Lower-current and Fast switching of A Perpendicular TMR for High Speed and High density Spin-Transfer-Torque MRAM", IEDM Tech. Dig. 309-312 (2008).
2. Jeong-Heon Park et al, "Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy", J. Appl. Phys. 103, 07A917 (2008).
3. Anjan Barman et al. "Ultrafast magnetization dynamics in high perpendicular anisotropy [Co/Pt]n multilayers", J. Appl. Phys. 101, 09D102 (2007)
4. S. Ikeda et al, "A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction", Nature Mater. 9, 721 (2010).
5. D.C. Worledge et al, "Spin torque switching of perpendicular Ta-CoFeB-MgO-based magnetic tunnel junctions", Appl. Phys. Lett. 98, 022501 (2001)
6. st CSIS symposium
7. Se-Chung Oh et al, "Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions", Nature Physics, 5, 898-902 (2009)