Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 57-59

  Khalili Amiri, P ^a   Zeng, Z M ^a   Upadhyaya, P ^a   Rowlands, G ^b   Zhao, H ^c   Krivorotov, I N ^b   Wang, J P ^c   Jiang, H W ^a   Katine, J A ^d   Langer, J ^e   Galatsis, K ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF MINNESOTA   (United States)

^d SAN JOSE RESEARCH CENTER   (United States)

^e Singulus Technologies AG   (Germany)

Author keywords

Magnetic tunnel junctions (MTJs); magnetoresistive random access memory (MRAM); nonvolatile memory; spin transfer torque (STT)

Indexed keywords

BARRIER THICKNESS; ENERGY CHANGES; ENERGY EFFICIENT; EXPERIMENTAL DATA; HIGH-SPEED; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; MICROMAGNETIC SIMULATIONS; NON-VOLATILE MEMORIES; OPERATING TEMPERATURE; PULSEWIDTHS; SPIN TRANSFER; SPIN TRANSFER TORQUE; STT-MRAM; SWITCHING ENERGY; SWITCHING VOLTAGES; TEMPERATURE SENSITIVITY; THERMAL STABILITY; WRITE OPERATIONS;

MAGNETIC STORAGE; MRAM DEVICES; TORQUE;

TUNNEL JUNCTIONS;

EID: 78650867845     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2082487     Document Type: Conference Paper

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