Spintronic device based non-volatile low standby power SRAM

Proceedings - IEEE Computer Society Annual Symposium on VLSI: Trends in VLSI Technology and Design, ISVLSI 2008

Volumn , Issue , 2008, Pages 40-45

  Zhao, Weisheng ^a,b   Belhaire, Eric ^a,b   Chappert, Claude ^a,b   Mazoyer, Pascale ^c  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHECK-POINTING; DATA SECURITY; HIGH OPERATING FREQUENCY; LOW STAND-BY POWER; MAGNETIC TUNNEL JUNCTION; MAIN MEMORIES; NON-VOLATILE; NON-VOLATILITY; POWER SUPPLIES; SPINTRONIC DEVICES; STANDBY POWER; VLSI TECHNOLOGIES;

COMPUTER SYSTEMS; ELECTRIC CONVERTERS; INTERFACES (COMPUTER); MAGNETIC DEVICES; MICROPROCESSOR CHIPS; SECURITY OF DATA; SEMICONDUCTOR JUNCTIONS; SPEED; STANDBY POWER SYSTEMS; TECHNOLOGY; TUNNEL JUNCTIONS; WAVEGUIDE JUNCTIONS;

STATIC RANDOM ACCESS STORAGE;

EID: 51849121598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISVLSI.2008.11     Document Type: Conference Paper

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