Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 819-826

  Zhang, Yue ^a   Zhao, Weisheng ^a   Lakys, Yahya ^a   Klein, Jacques Olivier ^a   Kim, Joo Von ^a   Ravelosona, Dafiné ^a   Chappert, Claude ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Compact modeling; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA); spin transfer torque (STT)

Indexed keywords

COMPACT MODEL; COMPACT MODELING; CURRENT-INDUCED MAGNETIZATION SWITCHING; EXPERIMENTAL MEASUREMENTS; EXPERIMENTAL PARAMETERS; FERROMAGNETIC LAYERS; HIGH THERMAL STABILITY; HIGH-DENSITY; HIGH-SPEED PERFORMANCE; LOGIC CHIPS; LOW-POWER CONSUMPTION; MAGNETIC TUNNEL JUNCTION; MIXED SIMULATION; NON-VOLATILE MEMORIES; PERPENDICULAR MAGNETIC ANISOTROPY; PHYSICAL MODEL; RECENT PROGRESS; SPIN TRANSFER TORQUE; STOCHASTIC BEHAVIOR; SWITCHING PERFORMANCE; TECHNOLOGY NODES; TUNNEL MAGNETORESISTANCE;

MAGNETIC ANISOTROPY; MODELS; STOCHASTIC MODELS;

MAGNETIC DEVICES;

EID: 84857648209     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2178416     Document Type: Article

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